BJT / MOSFET / Transistor

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MMBT5551LT1G

The product name：

MMBT5551LT1G

Manufacturer：

onsemi

MPN：

MMBT5551LT1G

Description：

Long‑description：

Bipolar (BJT) Transistor NPN 160 V 600 mA 225 mW Surface Mount SOT-23-3 (TO-236)

QQ：

1529597123

Telephone:

+8618122052719

Email:

eva@ruijisen.net

Time:

2026-09-04 17:25:34

CONTACT

Product Attributes

Parameter	Value	Parameter	Value
Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Current‑Collector Cutoff (Max)	100nA
Mfr	onsemi	DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 10mA, 5V
Packaging	Tape & Reel (TR) Cut Tape (CT)	Power‑Max	225 mW
Part Status	Active	Operating Temperature	-55°C ~ 150°C (TJ)
Transistor Type	NPN	Mounting Type	Surface Mount
Current‑Collector (Ic) (Max)	600 mA	Package / Case	TO‑236‑3, SC‑59, SOT‑23‑3
Voltage‑Collector Emitter Breakdown (Max)	160 V	Supplier Device Package	SOT‑23‑3 (TO‑236)
Vce Saturation (Max) @ Ib, Ic	200mV @ 5mA, 50mA	Base Product Number	MMBT5551